Solutions Strategies for Die Shift Problem in Wafer Level Compression MoldingSHARMA, Gaurav; KUMAR, Aditya; RAO, Vempati Srinivas et al.IEEE transactions on components, packaging, and manufacturing technology (2011. Print). 2011, Vol 1, Num 3-4, pp 502-509, issn 2156-3950, 8 p.Article

ZoneBOND Thin Wafer Support Process for Wafer Bonding ApplicationsMCCUTCHEON, Jeremy; BROWN, Robert; DACHSTEINER, Joelle et al.Journal of microelectronics and electronic packaging. 2010, Vol 7, Num 3, pp 138-142, issn 1551-4897, 5 p.Article

Pull system for control and dummy wafersCHEN, H.-C; LEE, C.-E. C.International journal, advanced manufacturing technology. 2003, Vol 22, Num 11-12, pp 805-818, issn 0268-3768, 14 p.Article

Investigation and Effects of Wafer Bow in 3D Integration Bonding SchemesCHEN, K. N; ZHU, Y; WU, W. W et al.Journal of electronic materials. 2010, Vol 39, Num 12, pp 2605-2610, issn 0361-5235, 6 p.Conference Paper

High-Temperature Spin-On Adhesives for Temporary Wafer BondingPILLALAMARRI, S; PULIGADDA, R; BRUBAKER, C et al.Journal of microelectronics and electronic packaging. 2007, Vol 4, Num 3, pp 105-111, issn 1551-4897, 7 p.Article

A systematic approach to thinning silicon wafers to the sub-40μm thickness rangeARUNASALAM, Parthiban; GORDON, Matthew H; SCHAPER, Leonard W et al.Journal of microelectronics and electronic packaging. 2006, Vol 3, Num 2, pp 86-94, issn 1551-4897, 9 p.Article

Improved low-temperature Si-Si hydrophilic wafer bondingESSER, R. H; HOBART, K. D; KUB, F. J et al.Journal of the Electrochemical Society. 2003, Vol 150, Num 3, pp G228-G231, issn 0013-4651Article

Wafer bonding: A flexible approach to materials integrationGÖSELE, U; ALEXE, M.The Electrochemical Society interface. 2000, Vol 9, Num 2, pp 20-25, issn 1064-8208Article

Characterization of embedded rhomboidal microchannels formation on silicon (100) surfaceD'ARRIGO, Giuseppe; SPINELLA, Corrado; RIMINI, Emanuele et al.Journal of the Electrochemical Society. 2004, Vol 151, Num 8, pp C523-C526, issn 0013-4651Article

A Radiation Imaging Detector Made by Postprocessing a Standard CMOS ChipBLANCO CARBALLO, Victor Manuel; CHEFDEVILLE, Maximilien; FRANSEN, Martin et al.IEEE electron device letters. 2008, Vol 29, Num 6, pp 585-587, issn 0741-3106, 3 p.Article

Demonstration and Electrical Performance Investigation of Wafer-Level Cu Oxide Hybrid Bonding SchemesCHEN, Kuan-Neng; ZHENG XU; LU, Jian-Qiang et al.IEEE electron device letters. 2011, Vol 32, Num 8, pp 1119-1121, issn 0741-3106, 3 p.Article

System-on-Wafer: 2-D and 3-D Technologies for Heterogeneous SystemsSOURIAU, Jean-Charles; SILLON, Nicolas; BRUN, Jean et al.IEEE transactions on components, packaging, and manufacturing technology (2011. Print). 2011, Vol 1, Num 5-6, pp 813-824, issn 2156-3950, 12 p.Article

Integration of High Aspect Ratio Tapered Silicon Via for Silicon Carrier FabricationRANGANATHAN, N; EBIN, Liao; LINN, Linn et al.IEEE transactions on advanced packaging. 2009, Vol 32, Num 1, pp 62-71, issn 1521-3323, 10 p.Article

Flach- und Hohlkörperwaffeln : moderne Maschinen und Anlagen sind nötig = Wafers of flat- and hollow bodyHEIL, W.Zucker- und Süsswaren-Wirtschaft. 1992, Vol 45, Num 3, pp 94-97, issn 0373-0204Conference Paper

Low-temperature wafer bonding for MEMS packaging utilizing screen-printed sub-micron size Au particle patternsISHIZUK, S; AKIYAMA, N; OGASHIWA, T et al.Microelectronic engineering. 2011, Vol 88, Num 8, pp 2275-2277, issn 0167-9317, 3 p.Conference Paper

Size determination of microscratches on silicon oxide wafer surface using scattered lightHA, Taeho; MIYOSHI, Takashi; TAKAYA, Yasuhiro et al.Precision engineering. 2003, Vol 27, Num 3, pp 265-272, issn 0141-6359, 8 p.Article

Silicon direct bonding for sensor applications : characterization of the bond qualityHARENDT, C; HÖFFLINGER, B; GRAF, H.-G et al.Sensors and actuators. A, Physical. 1991, Vol 25, Num 1-3, pp 87-92Article

Forty years of Moore's Law : ever smaller transistors and ever larger wafersDAN HUTCHESON, G.Proceedings - Electrochemical Society. 2006, pp 3-9, issn 0161-6374, isbn 1-56677-439-X, 1Vol, 7 p.Conference Paper

Wafer-level packaging of silicon to glass with a BCB intermediate layer using localised laser heatingLORENZ, N; SMITH, M. D; HAND, D. P et al.Microelectronics and reliability. 2011, Vol 51, Num 12, pp 2257-2262, issn 0026-2714, 6 p.Article

Wafer-Level Cu/Sn to Cu/Sn SLID-Bonded Interconnects with Increased StrengthHE LIU; SALOMONSEN, Guttorm; KAIYING WANG et al.IEEE transactions on components, packaging, and manufacturing technology (2011. Print). 2011, Vol 1, Num 9-10, pp 1350-1358, issn 2156-3950, 9 p.Article

Wafer-to-Wafer Alignment for Three-Dimensional Integration: A ReviewLEE, Sang Hwui; CHEN, Kuan-Neng; LU, James Jian-Qiang et al.Journal of microelectromechanical systems. 2011, Vol 20, Num 4, pp 885-898, issn 1057-7157, 14 p.Article

Deformation of bowed silicon chips due to adhesion and applied pressurePAMP, Andy; ADAMS, George G.Journal of adhesion science and technology. 2007, Vol 21, Num 11, pp 1021-1043, issn 0169-4243, 23 p.Article

Mathematical model of low-temperature wafer bonding under medium vacuum and its application : Packaging for micro- and nanoscale systemsWEI BO YU; JUN WEI; CHER MING TAN et al.IEEE transactions on advanced packaging. 2005, Vol 28, Num 4, pp 650-658, issn 1521-3323, 9 p.Article

A servo-controlled capacitive pressure sensor using a capped-cylinder structure microfabricated by a three-mask processPARK, Jae-Sung; GIANCHANDANI, Yogesh B.Journal of microelectromechanical systems. 2003, Vol 12, Num 2, pp 209-220, issn 1057-7157, 12 p.Article

Modeling the formation of spontaneous wafer direct bonding under low temperatureZIRONG TANG; TIELIN SHI; GUANGLAN LIAO et al.Microelectronic engineering. 2008, Vol 85, Num 8, pp 1754-1757, issn 0167-9317, 4 p.Article